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G3R75MT12D

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G3R75MT12D

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.69V @ 7.5mA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-247-3

Gate Charge (Qg) (Max) @ Vgs : 54 nC @ 15 V

Rds On (Max) @ Id, Vgs : 90mOhm @ 20A, 15V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 15V

Package : Tube

Drain to Source Voltage (Vdss) : 1200 V

Vgs (Max) : ±15V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1560 pF @ 800 V

Mounting Type : Through Hole

Series : G3R™

Supplier Device Package : TO-247-3

Mfr : GeneSiC Semiconductor

Current - Continuous Drain (Id) @ 25°C : 41A (Tc)

Power Dissipation (Max) : 207W (Tc)

Technology : SiCFET (Silicon Carbide)

Base Product Number : G3R75

Description : SIC MOSFET N-CH 41A TO247-3

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N-Channel 1200 V 41A (Tc) 207W (Tc) Through Hole TO-247-3

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